Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	POWER MOS 8™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	337W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	337W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	78A
Collector Emitter Breakdown Voltage	600V
Turn On Time	29 ns
Test Condition	400V, 26A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 26A
Turn Off Time-Nom (toff)	208 ns
IGBT Type	PT
Gate Charge	128nC
Current - Collector Pulsed (Icm)	130A
Td (on/off) @ 25°C	16ns/84ns
Switching Energy	409μJ (on), 258μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
RoHS Status	RoHS Compliant

APT44GA60B

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