IXDH30N120

new-10%

Manufacturer part number:IXDH30N120

Manufacturer:IXYS

Description:IGBT 1200V 60A 300W TO247AD

Case Package:SOT-23

Datasheet:IXDH30N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	LOW SWITCHING LOSSES
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXD*30N120
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	300W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	60A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.4V
Turn On Time	170 ns
Test Condition	600V, 30A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 30A
Turn Off Time-Nom (toff)	570 ns
IGBT Type	NPT
Gate Charge	120nC
Current - Collector Pulsed (Icm)	76A
Switching Energy	4.6mJ (on), 3.4mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	ROHS3 Compliant