SKB06N60HSATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SKB06N60HSATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Max Power Dissipation
68W
Terminal Form
GULL WING
Base Part Number
*KB06N60
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
68W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
12A
Reverse Recovery Time
100 ns
Collector Emitter Breakdown Voltage
600V
Turn On Time
23 ns
Test Condition
400V, 6A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.15V @ 15V, 6A
Turn Off Time-Nom (toff)
245 ns
IGBT Type
NPT
Gate Charge
33nC
Current - Collector Pulsed (Icm)
24A
Td (on/off) @ 25°C
11ns/196ns
Switching Energy
190μJ
Radiation Hardening
No
RoHS Status
RoHS Compliant
SKB06N60HSATMA1 Product Details
SKB06N60HSATMA1 Description
SKB06N60HSATMA1 is a single IGBT with a breakdown voltage of 600V from Infineon Technologies. SKB06N60HSATMA1 operates between -55°C~150°C TJ, and its maximum collector current is 12A. The SKB06N60HSATMA1 has three pins and it is available in Tape & Reel (TR) packaging way. SKB06N60HSATMA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.
SKB06N60HSATMA1 Features
30% lower Eoff compared to the previous generation
Short circuit withstand time – 10 μs
Designed for operation above 30 kHz
High ruggedness, temperature-stable behavior
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications