APT80GA90LD40

new-10%

Manufacturer part number:APT80GA90LD40

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 900V 145A 3-Pin(3+Tab) TO-264

Case Package:SOT-23

Datasheet:APT80GA90LD40 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	29 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Packaging	Tube
Published	1999
Series	POWER MOS 8™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	LOW CONDUCTION LOSS
Max Power Dissipation	625W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	900V
Max Collector Current	145A
Reverse Recovery Time	25 ns
Collector Emitter Breakdown Voltage	900V
Turn On Time	49 ns
Test Condition	600V, 47A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 47A
Turn Off Time-Nom (toff)	320 ns
IGBT Type	PT
Gate Charge	200nC
Current - Collector Pulsed (Icm)	239A
Td (on/off) @ 25°C	18ns/149ns
Switching Energy	1652μJ (on), 1389μJ (off)
Radiation Hardening	No
RoHS Status	RoHS Compliant