STGP19NC60SD

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Manufacturer part number:STGP19NC60SD

Manufacturer:STMicroelectronics

Description:STGP19NC60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP19NC60SD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	130W
Base Part Number	STGP19
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	17.5 ns
Power - Max	130W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	175 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	31 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Turn On Time	23.5 ns
Test Condition	480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 12A
Turn Off Time-Nom (toff)	535 ns
Gate Charge	54.5nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	17.5ns/175ns
Switching Energy	135μJ (on), 815μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free