STGP19NC60W

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Manufacturer part number:STGP19NC60W

Manufacturer:STMicroelectronics

Description:STGP19NC60W datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP19NC60W Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	130W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGP19
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	130W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Turn On Time	33 ns
Test Condition	390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 12A
Turn Off Time-Nom (toff)	204 ns
Gate Charge	53nC
Td (on/off) @ 25°C	25ns/90ns
Switching Energy	81μJ (on), 125μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
RoHS Status	ROHS3 Compliant