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RJP60F4DPM-00#T1

RJP60F4DPM-00#T1

RJP60F4DPM-00#T1

Renesas Electronics America

IGBT 600V 60A 41.2W TO-3PFM

SOT-23

RJP60F4DPM-00#T1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PFM, SC-93-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Published 2011
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 41.2W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number RJP60F
Pin Count 3
Element Configuration Single
Input Type Standard
Power - Max 41.2W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.82V
Max Collector Current 60A
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.82V @ 15V, 30A
IGBT Type Trench
Td (on/off) @ 25°C 45ns/70ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.06000 $6.06
10 $5.41000 $54.1
25 $4.86920 $121.73

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