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IXXH80N65B4H1

  • IXXH80N65B4H1
  • IXXH80N65B4H1

IXXH80N65B4H1

IXXH80N65B4H1

IXYS

IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT

SOT-23

IXXH80N65B4H1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2015
Series GenX4™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 625W
Element Configuration Single
Power Dissipation 625W
Input Type Standard
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 160A
Reverse Recovery Time 150ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.65V
Test Condition 400V, 80A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A
IGBT Type PT
Gate Charge 120nC
Current - Collector Pulsed (Icm) 430A
Td (on/off) @ 25°C 38ns/120ns
Switching Energy 3.77mJ (on), 1.2mJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.057528 $4.057528
10 $3.827857 $38.27857
100 $3.611186 $361.1186
500 $3.406779 $1703.3895
1000 $3.213942 $3213.942

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