STGW28IH125DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGW28IH125DF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
375W
Base Part Number
STGW28
Element Configuration
Single
Input Type
Standard
Power - Max
375W
Collector Emitter Voltage (VCEO)
1.25kV
Max Collector Current
60A
Collector Emitter Breakdown Voltage
1.25kV
Voltage - Collector Emitter Breakdown (Max)
1250V
Collector Emitter Saturation Voltage
2.65V
Test Condition
600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 25A
IGBT Type
Trench Field Stop
Gate Charge
114nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
-/128ns
Switching Energy
720μJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
600
$3.36342
$2018.052
STGW28IH125DF Product Details
STGW28IH125DF Description
STGW28IH125DF, these IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.