IXYH30N120C3D1

new-10%

Manufacturer part number:IXYH30N120C3D1

Manufacturer:IXYS

Description:IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT

Case Package:SOT-23

Datasheet:IXYH30N120C3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	416W
Number of Elements	1
Element Configuration	Single
Power Dissipation	416W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	23 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	126 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	66A
Reverse Recovery Time	195ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.7V
Turn On Time	71 ns
Test Condition	600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.3V @ 15V, 30A
Turn Off Time-Nom (toff)	296 ns
Gate Charge	69nC
Current - Collector Pulsed (Icm)	133A
Td (on/off) @ 25°C	19ns/130ns
Switching Energy	2.6mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Height	21.46mm
Length	16.26mm
Width	5.3mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free