STGB8NC60KDT4

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Manufacturer part number:STGB8NC60KDT4

Manufacturer:STMicroelectronics

Description:STGB8NC60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB8NC60KDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	65W
Terminal Form	GULL WING
Base Part Number	STGB8
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	65W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	15A
Reverse Recovery Time	23.5 ns
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Turn On Time	23 ns
Test Condition	390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.75V @ 15V, 3A
Turn Off Time-Nom (toff)	242 ns
Gate Charge	19nC
Current - Collector Pulsed (Icm)	30A
Td (on/off) @ 25°C	17ns/72ns
Switching Energy	55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	2.4mm
Length	6.6mm
Width	6.2mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant