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IXYR100N120C3

IXYR100N120C3

IXYR100N120C3

IXYS

IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs

SOT-23

IXYR100N120C3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 484W
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 484W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 32 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 123 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 104A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.9V
Turn On Time 122 ns
Test Condition 600V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 100A
Turn Off Time-Nom (toff) 265 ns
Gate Charge 270nC
Current - Collector Pulsed (Icm) 480A
Td (on/off) @ 25°C 32ns/123ns
Switching Energy 6.5mJ (on), 2.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 21.34mm
Length 16.13mm
Width 5.21mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $25.015000 $25.015
10 $23.599057 $235.99057
100 $22.263261 $2226.3261
500 $21.003076 $10501.538
1000 $19.814223 $19814.223

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