IXYR100N120C3

new-10%

Manufacturer part number:IXYR100N120C3

Manufacturer:IXYS

Description:IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs

Case Package:SOT-23

Datasheet:IXYR100N120C3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	484W
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	484W
Case Connection	ISOLATED
Input Type	Standard
Turn On Delay Time	32 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	123 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	104A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.9V
Turn On Time	122 ns
Test Condition	600V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 100A
Turn Off Time-Nom (toff)	265 ns
Gate Charge	270nC
Current - Collector Pulsed (Icm)	480A
Td (on/off) @ 25°C	32ns/123ns
Switching Energy	6.5mJ (on), 2.9mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Height	21.34mm
Length	16.13mm
Width	5.21mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free