2SC5001TLR Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 2V.The collector emitter saturation voltage is 130mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 50mA, 4A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 10A current rating.A transition frequency of 150MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 20V volts.In extreme cases, the collector current can be as low as 10A volts.

2SC5001TLR Features

the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 250mV @ 50mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 150MHz

2SC5001TLR Applications

There are a lot of ROHM Semiconductor 2SC5001TLR applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter