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BDX53B

  • BDX53B
  • BDX53B

BDX53B

BDX53B

Rochester Electronics, LLC

BDX53B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BDX53B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration DARLINGTON WITH BUILT-IN DIODE
Power - Max 60W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A 3V
Current - Collector Cutoff (Max) 500μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.45276 $0.90552
BDX53B Product Details

BDX53B Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 12mA, 3A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

BDX53B Features


the DC current gain for this device is 750 @ 3A 3V
the vce saturation(Max) is 2V @ 12mA, 3A

BDX53B Applications


There are a lot of Rochester Electronics, LLC BDX53B applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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