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2N3415

  • 2N3415
  • 2N3415

2N3415

2N3415

Rochester Electronics, LLC

2N3415 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N3415 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 4.5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 3mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 500mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.59466 $1.18932
2N3415 Product Details

2N3415 Overview


This device has a DC current gain of 180 @ 2mA 4.5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 3mA, 50mA.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.

2N3415 Features


the DC current gain for this device is 180 @ 2mA 4.5V
the vce saturation(Max) is 300mV @ 3mA, 50mA

2N3415 Applications


There are a lot of Rochester Electronics, LLC 2N3415 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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