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BULD742CT4

BULD742CT4

BULD742CT4

STMicroelectronics

BULD742CT4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

BULD742CT4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 45W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BULD742
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 45W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 800mA 3V
Current - Collector Cutoff (Max) 250μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 3.5A
Collector Emitter Breakdown Voltage 400V
Max Breakdown Voltage 400V
Emitter Base Voltage (VEBO) 15V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.772744 $1.772744
10 $1.672400 $16.724
100 $1.577736 $157.7736
500 $1.488430 $744.215
1000 $1.404179 $1404.179
BULD742CT4 Product Details

BULD742CT4 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 800mA 3V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1A, 3.5A.If the emitter base voltage is kept at 15V, a high level of efficiency can be achieved.Breakdown input voltage is 400V volts.The maximum collector current is 4A volts.

BULD742CT4 Features


the DC current gain for this device is 25 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 15V

BULD742CT4 Applications


There are a lot of STMicroelectronics BULD742CT4 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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