PXTA14,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PXTA14,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.3W
Terminal Form
FLAT
Base Part Number
PXTA14
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1.3W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
30V
Frequency - Transition
125MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
10V
hFE Min
10000
Continuous Collector Current
500mA
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.523680
$4.52368
10
$4.267623
$42.67623
100
$4.026059
$402.6059
500
$3.798169
$1899.0845
1000
$3.583178
$3583.178
PXTA14,115 Product Details
PXTA14,115 Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A constant collector voltage of 500mA is necessary for high efficiency.Keeping the emitter base voltage at 10V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.There is a breakdown input voltage of 30V volts that it can take.When collector current reaches its maximum, it can reach 500mA volts.
PXTA14,115 Features
the DC current gain for this device is 20000 @ 100mA 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 100μA, 100mA the emitter base voltage is kept at 10V a transition frequency of 125MHz
PXTA14,115 Applications
There are a lot of Nexperia USA Inc. PXTA14,115 applications of single BJT transistors.