APT100M50J

new-10%

Manufacturer part number:APT100M50J

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 500V 100A SOT-227

Case Package:SOT-23

Datasheet:APT100M50J Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Weight	30.000004g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	100A
Pin Count	4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	960W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	960W
Case Connection	ISOLATED
Turn On Delay Time	105 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	38m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	24600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	103A Tc
Gate Charge (Qg) (Max) @ Vgs	620nC @ 10V
Rise Time	125ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	90 ns
Turn-Off Delay Time	280 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.036Ohm
Drain to Source Breakdown Voltage	500V
Avalanche Energy Rating (Eas)	3350 mJ
Height	9.6mm
Length	38.2mm
Width	25.4mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free