NSS30100LT1G Overview

In this device, the DC current gain is 100 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -650mV, which allows for maximum design flexibility.A VCE saturation (Max) of 650mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).In this part, there is a transition frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.Maximum collector currents can be below 1A volts.

NSS30100LT1G Features

the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz

NSS30100LT1G Applications

There are a lot of ON Semiconductor NSS30100LT1G applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting