JANTX2N2484UB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N2484UB Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/376
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Max Power Dissipation
360mW
Terminal Position
DUAL
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
360mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
225 @ 10mA 5V
Current - Collector Cutoff (Max)
2nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 100μA, 1mA
Collector Emitter Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$20.78730
$2078.73
JANTX2N2484UB Product Details
JANTX2N2484UB Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 225 @ 10mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 100μA, 1mA.Collector current can be as low as 50mA volts at its maximum.
JANTX2N2484UB Features
the DC current gain for this device is 225 @ 10mA 5V the vce saturation(Max) is 300mV @ 100μA, 1mA
JANTX2N2484UB Applications
There are a lot of Microsemi Corporation JANTX2N2484UB applications of single BJT transistors.