2SA2007E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA2007E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
1999
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
25W
Element Configuration
Single
Gain Bandwidth Product
80MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
12A
DC Current Gain (hFE) (Min) @ Ic, Vce
320 @ 2A 2V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 400mA, 8A
Collector Emitter Breakdown Voltage
60V
Current - Collector (Ic) (Max)
12A
Collector Emitter Saturation Voltage
-300mV
Collector Base Voltage (VCBO)
-100V
Emitter Base Voltage (VEBO)
-5V
hFE Min
160
Continuous Collector Current
-12A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.592480
$8.59248
10
$8.106113
$81.06113
100
$7.647277
$764.7277
500
$7.214412
$3607.206
1000
$6.806049
$6806.049
2SA2007E Product Details
2SA2007E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 320 @ 2A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 500mV @ 400mA, 8A means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at -12A for high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.During maximum operation, collector current can be as low as 12A volts.
2SA2007E Features
the DC current gain for this device is 320 @ 2A 2V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 500mV @ 400mA, 8A the emitter base voltage is kept at -5V
2SA2007E Applications
There are a lot of ROHM Semiconductor 2SA2007E applications of single BJT transistors.