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BD440S

BD440S

BD440S

ON Semiconductor

BD440S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD440S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation36W
Current Rating-4A
Frequency 3MHz
Base Part Number BD440
Number of Elements 1
Element ConfigurationSingle
Power Dissipation36W
Transistor Application SWITCHING
Gain Bandwidth Product3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 1V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage60V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage-800mV
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
hFE Min 25
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6084 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.132675$0.132675
10$0.125165$1.25165
100$0.118080$11.808
500$0.111396$55.698
1000$0.105091$105.091

BD440S Product Details

BD440S Overview


This device has a DC current gain of 40 @ 500mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -800mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 200mA, 2A.Emitter base voltages of -5V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -4A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Maximum collector currents can be below 4A volts.

BD440S Features


the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz

BD440S Applications


There are a lot of ON Semiconductor BD440S applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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