MMBT4401T-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBT4401T-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-523
Number of Pins
3
Weight
2.012816mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
600mA
Frequency
250MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMBT4401
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
150mW
Gain Bandwidth Product
250MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
750mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
Continuous Collector Current
600mA
Turn Off Time-Max (toff)
255ns
Height
750μm
Length
1.6mm
Width
800μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.05230
$0.1569
6,000
$0.04600
$0.276
15,000
$0.03970
$0.5955
30,000
$0.03760
$1.128
75,000
$0.03550
$2.6625
150,000
$0.03200
$4.8
MMBT4401T-7-F Product Details
MMBT4401T-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 1V.The collector emitter saturation voltage is 750mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at 600mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor can be broken down at a voltage of 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMBT4401T-7-F Features
the DC current gain for this device is 100 @ 150mA 1V a collector emitter saturation voltage of 750mV the vce saturation(Max) is 750mV @ 50mA, 500mA the emitter base voltage is kept at 6V the current rating of this device is 600mA a transition frequency of 250MHz
MMBT4401T-7-F Applications
There are a lot of Diodes Incorporated MMBT4401T-7-F applications of single BJT transistors.