2PC4617RMB,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
2PC4617RMB,315 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Max Power Dissipation
250mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
2PC4617
Pin Count
3
Power - Max
250mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2PC4617RMB,315 Product Details
2PC4617RMB,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 1mA 6V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 5mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Maximum collector currents can be below 100mA volts.
2PC4617RMB,315 Features
the DC current gain for this device is 180 @ 1mA 6V the vce saturation(Max) is 200mV @ 5mA, 50mA the emitter base voltage is kept at 5V
2PC4617RMB,315 Applications
There are a lot of Nexperia USA Inc. 2PC4617RMB,315 applications of single BJT transistors.