BC69PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC69PA,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-PowerUDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
420mW
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Frequency
140MHz
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1.65W
Case Connection
COLLECTOR
Power - Max
420mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
140MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
32V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.261360
$0.26136
10
$0.246566
$2.46566
100
$0.232609
$23.2609
500
$0.219443
$109.7215
1000
$0.207022
$207.022
BC69PA,115 Product Details
BC69PA,115 Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 140MHz is present in the part.Input voltage breakdown is available at 20V volts.Maximum collector currents can be below 2A volts.
BC69PA,115 Features
the DC current gain for this device is 85 @ 500mA 1V the vce saturation(Max) is 600mV @ 200mA, 2A the emitter base voltage is kept at 5V a transition frequency of 140MHz
BC69PA,115 Applications
There are a lot of Nexperia USA Inc. BC69PA,115 applications of single BJT transistors.