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BC807K-40R

BC807K-40R

BC807K-40R

Nexperia USA Inc.

BC807K-40R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC807K-40R Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 80MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03749 $0.11247
BC807K-40R Product Details

BC807K-40R Overview


In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The device exhibits a collector-emitter breakdown at 45V.

BC807K-40R Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA

BC807K-40R Applications


There are a lot of Nexperia USA Inc. BC807K-40R applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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