BC807K-40R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC807K-40R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Power - Max
250mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
80MHz
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.03749
$0.11247
BC807K-40R Product Details
BC807K-40R Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The device exhibits a collector-emitter breakdown at 45V.
BC807K-40R Features
the DC current gain for this device is 250 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA
BC807K-40R Applications
There are a lot of Nexperia USA Inc. BC807K-40R applications of single BJT transistors.