BC847B,215 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.There is a transition frequency of 100MHz in the part.A maximum collector current of 100mA volts is possible.

BC847B,215 Features

the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

BC847B,215 Applications

There are a lot of Nexperia USA Inc. BC847B,215 applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface