2SAR533PFRAT100 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 3V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
2SAR533PFRAT100 Features
the DC current gain for this device is 120 @ 50mA 3V
the vce saturation(Max) is 400mV @ 50mA, 1A
a transition frequency of 300MHz
2SAR533PFRAT100 Applications
There are a lot of ROHM Semiconductor 2SAR533PFRAT100 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
