BCP51-10,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCP51-10,135 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
145MHz
Base Part Number
BCP51
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.35W
Case Connection
COLLECTOR
Power - Max
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
145MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
145MHz
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
Height
6.35mm
Length
6.35mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$17.348800
$17.3488
10
$16.366792
$163.66792
100
$15.440370
$1544.037
500
$14.566387
$7283.1935
1000
$13.741875
$13741.875
BCP51-10,135 Product Details
BCP51-10,135 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 63 @ 150mA 2V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.145MHz is present in the transition frequency.Input voltage breakdown is available at 45V volts.A maximum collector current of 1A volts is possible.
BCP51-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 145MHz
BCP51-10,135 Applications
There are a lot of Nexperia USA Inc. BCP51-10,135 applications of single BJT transistors.