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BFN39E6327HTSA1

BFN39E6327HTSA1

BFN39E6327HTSA1

Rochester Electronics, LLC

HIGH VOLTAGE BIPOLAR TRANSISTOR

SOT-23

BFN39E6327HTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.5W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
In-Stock:82445 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.09000$0.09
500$0.0891$44.55
1000$0.0882$88.2
1500$0.0873$130.95
2000$0.0864$172.8
2500$0.0855$213.75

About BFN39E6327HTSA1

The BFN39E6327HTSA1 from Rochester Electronics, LLC is a high-performance microcontroller designed for a wide range of embedded applications. This component features HIGH VOLTAGE BIPOLAR TRANSISTOR.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BFN39E6327HTSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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