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2SD1805G-TL-E

2SD1805G-TL-E

2SD1805G-TL-E

ON Semiconductor

2SD1805G-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SD1805G-TL-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 1999
JESD-609 Code e6
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Other Transistors
Max Power Dissipation1W
Reach Compliance Code not_compliant
Base Part Number 2SD1805
Pin Count3
Element ConfigurationSingle
Gain Bandwidth Product120MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 60mA, 3A
Collector Emitter Breakdown Voltage20V
Current - Collector (Ic) (Max) 5A
Max Frequency 120MHz
Collector Emitter Saturation Voltage1.5V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 280
Height 2.3mm
Length 6.5mm
Width 5.5mm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:35398 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.932677$1.932677
10$1.823280$18.2328
100$1.720075$172.0075
500$1.622713$811.3565
1000$1.530861$1530.861

2SD1805G-TL-E Product Details

2SD1805G-TL-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 280 @ 500mA 2V.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 60mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The maximum collector current is 5A volts.

2SD1805G-TL-E Features


the DC current gain for this device is 280 @ 500mA 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V

2SD1805G-TL-E Applications


There are a lot of ON Semiconductor 2SD1805G-TL-E applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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