2SC2713-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SC2713-GR,LF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
125°C TJ
Packaging
Cut Tape (CT)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
150mW
Power - Max
150mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
120V
Max Breakdown Voltage
120V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.642699
$0.642699
10
$0.606320
$6.0632
100
$0.572000
$57.2
500
$0.539623
$269.8115
1000
$0.509078
$509.078
2SC2713-GR,LF Product Details
2SC2713-GR,LF Overview
In this device, the DC current gain is 200 @ 2mA 6V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor can take a breakdown input voltage of 120V volts.When collector current reaches its maximum, it can reach 100mA volts.
2SC2713-GR,LF Features
the DC current gain for this device is 200 @ 2mA 6V the vce saturation(Max) is 300mV @ 1mA, 10mA the emitter base voltage is kept at 5V
2SC2713-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SC2713-GR,LF applications of single BJT transistors.