BCV48,115 Overview

This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 10V to achieve high efficiency.In this part, there is a transition frequency of 220MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.When collector current reaches its maximum, it can reach 500mA volts.

BCV48,115 Features

the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 220MHz

BCV48,115 Applications

There are a lot of Nexperia USA Inc. BCV48,115 applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter