FJPF13009H2TU Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 8 @ 5A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 3A, 12A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Its current rating is 12A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 4MHz.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.

FJPF13009H2TU Features

the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz

FJPF13009H2TU Applications

There are a lot of ON Semiconductor FJPF13009H2TU applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter