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BCW60B,235

  • BCW60B,235
  • BCW60B,235

BCW60B,235

BCW60B,235

Nexperia USA Inc.

BCW60B,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCW60B,235 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW NOISE
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BCW60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Collector Emitter Breakdown Voltage 32V
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Turn Off Time-Max (toff) 800ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.758240 $7.75824
10 $7.319094 $73.19094
100 $6.904806 $690.4806
500 $6.513968 $3256.984
1000 $6.145253 $6145.253
BCW60B,235 Product Details

BCW60B,235 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 5V.When VCE saturation is 550mV @ 1.25mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In the part, the transition frequency is 250MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BCW60B,235 Features


the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz

BCW60B,235 Applications


There are a lot of Nexperia USA Inc. BCW60B,235 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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