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BCW66FVL

  • BCW66FVL
  • BCW66FVL

BCW66FVL

BCW66FVL

Nexperia USA Inc.

BCW66FVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCW66FVL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 3
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.076595 $0.076595
500 $0.056320 $28.16
1000 $0.046933 $46.933
2000 $0.043058 $86.116
5000 $0.040241 $201.205
10000 $0.037434 $374.34
15000 $0.036203 $543.045
50000 $0.035598 $1779.9
BCW66FVL Product Details

BCW66FVL Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 450mV @ 50mA, 500mA.The device exhibits a collector-emitter breakdown at 45V.

BCW66FVL Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA

BCW66FVL Applications


There are a lot of Nexperia USA Inc. BCW66FVL applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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