BCW66GVL

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Manufacturer part number:BCW66GVL

Manufacturer:Nexperia USA Inc.

Description:BCW66GVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:BCW66GVL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Pin Count	3
Power - Max	250mW
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 100mA 1V
Current - Collector Cutoff (Max)	5μA ICBO
Vce Saturation (Max) @ Ib, Ic	450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	800mA
Frequency - Transition	100MHz
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$0.173924	$0.173924
10	$0.164079	$1.64079
100	$0.154791	$15.4791
500	$0.146029	$73.0145
1000	$0.137763	$137.763

BCW66GVL Overview

In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 50mA, 500mA.The device exhibits a collector-emitter breakdown at 45V.