BST50,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BST50,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Supplier Device Package
SOT-89
Weight
130.492855mg
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.3W
Base Part Number
BST50
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1.3W
Power - Max
1.3W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 500mA 10V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
1.3V @ 500μA, 500mA
Collector Emitter Breakdown Voltage
45V
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
1A
Collector Emitter Saturation Voltage
1.3V
Max Breakdown Voltage
45V
Frequency - Transition
200MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.67000
$0.67
10
$0.59600
$5.96
100
$0.46680
$46.68
500
$0.37776
$188.88
BST50,115 Product Details
BST50,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA 10V DC current gain.A collector emitter saturation voltage of 1.3V ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.3V @ 500μA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.Single BJT transistor can take a breakdown input voltage of 45V volts.Product comes in the supplier's device package SOT-89.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.In extreme cases, the collector current can be as low as 1A volts.
BST50,115 Features
the DC current gain for this device is 2000 @ 500mA 10V a collector emitter saturation voltage of 1.3V the vce saturation(Max) is 1.3V @ 500μA, 500mA the emitter base voltage is kept at 5V the supplier device package of SOT-89
BST50,115 Applications
There are a lot of Nexperia USA Inc. BST50,115 applications of single BJT transistors.