BST50,115 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA 10V DC current gain.A collector emitter saturation voltage of 1.3V ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.3V @ 500μA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.Single BJT transistor can take a breakdown input voltage of 45V volts.Product comes in the supplier's device package SOT-89.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.In extreme cases, the collector current can be as low as 1A volts.

BST50,115 Features

the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of SOT-89

BST50,115 Applications

There are a lot of Nexperia USA Inc. BST50,115 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting