PBSS2515MB,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS2515MB,315 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
590mW
Frequency
420MHz
Base Part Number
PBSS2515
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
590mW
Power - Max
250mW
Gain Bandwidth Product
420MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
15V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
25mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
15V
Collector Emitter Saturation Voltage
1.1V
Max Breakdown Voltage
15V
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.256884
$0.256884
10
$0.242343
$2.42343
100
$0.228625
$22.8625
500
$0.215685
$107.8425
1000
$0.203476
$203.476
PBSS2515MB,315 Product Details
PBSS2515MB,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 25mV @ 500μA, 10mA means Ic has reached its maximum value(saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Input voltage breakdown is available at 15V volts.When collector current reaches its maximum, it can reach 500mA volts.
PBSS2515MB,315 Features
the DC current gain for this device is 200 @ 10mA 2V a collector emitter saturation voltage of 1.1V the vce saturation(Max) is 25mV @ 500μA, 10mA the emitter base voltage is kept at 6V
PBSS2515MB,315 Applications
There are a lot of Nexperia USA Inc. PBSS2515MB,315 applications of single BJT transistors.