PBSS2515MB,315 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 25mV @ 500μA, 10mA means Ic has reached its maximum value(saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Input voltage breakdown is available at 15V volts.When collector current reaches its maximum, it can reach 500mA volts.

PBSS2515MB,315 Features

the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 25mV @ 500μA, 10mA
the emitter base voltage is kept at 6V

PBSS2515MB,315 Applications

There are a lot of Nexperia USA Inc. PBSS2515MB,315 applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter