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KSD227YBU

KSD227YBU

KSD227YBU

ON Semiconductor

KSD227YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD227YBU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD227
Power - Max 400mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 300mA
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.02000 $0.02
500 $0.0198 $9.9
1000 $0.0196 $19.6
1500 $0.0194 $29.1
2000 $0.0192 $38.4
2500 $0.019 $47.5
KSD227YBU Product Details

KSD227YBU Overview


DC current gain in this device equals 120 @ 50mA 1V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 30mA, 300mA.Supplier device package TO-92-3 comes with the product.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.

KSD227YBU Features


the DC current gain for this device is 120 @ 50mA 1V
the vce saturation(Max) is 400mV @ 30mA, 300mA
the supplier device package of TO-92-3

KSD227YBU Applications


There are a lot of ON Semiconductor KSD227YBU applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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