KSD227YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD227YBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSD227
Power - Max
400mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 50mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
300mA
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.02000
$0.02
500
$0.0198
$9.9
1000
$0.0196
$19.6
1500
$0.0194
$29.1
2000
$0.0192
$38.4
2500
$0.019
$47.5
KSD227YBU Product Details
KSD227YBU Overview
DC current gain in this device equals 120 @ 50mA 1V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 30mA, 300mA.Supplier device package TO-92-3 comes with the product.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.
KSD227YBU Features
the DC current gain for this device is 120 @ 50mA 1V the vce saturation(Max) is 400mV @ 30mA, 300mA the supplier device package of TO-92-3
KSD227YBU Applications
There are a lot of ON Semiconductor KSD227YBU applications of single BJT transistors.