FJT44KTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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FJT44KTF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
188.014037mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
300mA
Base Part Number
FJT44
Number of Elements
1
Voltage
400V
Element Configuration
Single
Current
3A
Power Dissipation
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
750mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
750mV
Max Breakdown Voltage
400V
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
6V
hFE Min
50
Height
1.6mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.16470
$0.3294
5,000
$0.15408
$0.7704
12,500
$0.14345
$1.7214
25,000
$0.14168
$3.542
FJT44KTF Product Details
FJT44KTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 10mA 10V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 750mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Input voltage breakdown is available at 400V volts.A maximum collector current of 300mA volts is possible.
FJT44KTF Features
the DC current gain for this device is 50 @ 10mA 10V a collector emitter saturation voltage of 750mV the vce saturation(Max) is 750mV @ 5mA, 50mA the emitter base voltage is kept at 6V the current rating of this device is 300mA
FJT44KTF Applications
There are a lot of ON Semiconductor FJT44KTF applications of single BJT transistors.