PBSS4041NX,115 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 4A 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 150mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 210mV @ 300mA, 6A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.A transition frequency of 130MHz is present in the part.Single BJT transistor can be broken down at a voltage of 60V volts.Single BJT transistor is possible for the collector current to fall as low as 6.2A volts at Single BJT transistors maximum.

PBSS4041NX,115 Features

the DC current gain for this device is 150 @ 4A 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 210mV @ 300mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

PBSS4041NX,115 Applications

There are a lot of Nexperia USA Inc. PBSS4041NX,115 applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface