2SA1708S-AN Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 40mA, 400mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.The breakdown input voltage is 100V volts.During maximum operation, collector current can be as low as 1A volts.

2SA1708S-AN Features

the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 40mA, 400mA
the emitter base voltage is kept at 6V

2SA1708S-AN Applications

There are a lot of ON Semiconductor 2SA1708S-AN applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver