PBSS5120T,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS5120T,215 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
480mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
PBSS5120
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
480mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
100MHz
Max Breakdown Voltage
200V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
-5V
hFE Min
300
Height
6.35mm
Length
6.35mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.786240
$5.78624
10
$5.458717
$54.58717
100
$5.149733
$514.9733
500
$4.858239
$2429.1195
1000
$4.583244
$4583.244
PBSS5120T,215 Product Details
PBSS5120T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 500mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 200V volts can be used.When collector current reaches its maximum, it can reach 1A volts.
PBSS5120T,215 Features
the DC current gain for this device is 250 @ 500mA 2V the vce saturation(Max) is 250mV @ 50mA, 1A the emitter base voltage is kept at -5V a transition frequency of 100MHz
PBSS5120T,215 Applications
There are a lot of Nexperia USA Inc. PBSS5120T,215 applications of single BJT transistors.