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PBSS5120T,215

PBSS5120T,215

PBSS5120T,215

Nexperia USA Inc.

PBSS5120T,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5120T,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 480mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PBSS5120
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 480mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 100MHz
Max Breakdown Voltage 200V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) -5V
hFE Min 300
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.786240 $5.78624
10 $5.458717 $54.58717
100 $5.149733 $514.9733
500 $4.858239 $2429.1195
1000 $4.583244 $4583.244
PBSS5120T,215 Product Details

PBSS5120T,215 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 500mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 200V volts can be used.When collector current reaches its maximum, it can reach 1A volts.

PBSS5120T,215 Features


the DC current gain for this device is 250 @ 500mA 2V
the vce saturation(Max) is 250mV @ 50mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

PBSS5120T,215 Applications


There are a lot of Nexperia USA Inc. PBSS5120T,215 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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