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PZTA42,115

  • PZTA42,115
  • PZTA42,115

PZTA42,115

PZTA42,115

Nexperia USA Inc.

PZTA42,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PZTA42,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PZTA42
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1.2W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 50MHz
Frequency - Transition 50MHz
VCEsat-Max 0.5 V
Power Dissipation Ambient-Max 1.5W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.20397 $0.20397
2,000 $0.18828 $0.37656
5,000 $0.17782 $0.8891
10,000 $0.17259 $1.7259
PZTA42,115 Product Details

PZTA42,115 Overview


In this device, the DC current gain is 40 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.A transition frequency of 50MHz is present in the part.The device exhibits a collector-emitter breakdown at 300V.

PZTA42,115 Features


the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 50MHz

PZTA42,115 Applications


There are a lot of Nexperia USA Inc. PZTA42,115 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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