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PHX18NQ11T,127

PHX18NQ11T,127

PHX18NQ11T,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 90m Ω @ 9A, 10V ±20V 635pF @ 25V 21nC @ 10V 110V TO-220-3 Full Pack, Isolated Tab

SOT-23

PHX18NQ11T,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series TrenchMOS™
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 31.2W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 635pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12.5A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Drain to Source Voltage (Vdss) 110V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 12.5A
Drain-source On Resistance-Max 0.09Ohm
Pulsed Drain Current-Max (IDM) 50.2A
DS Breakdown Voltage-Min 110V
Avalanche Energy Rating (Eas) 56 mJ
RoHS Status ROHS3 Compliant
PHX18NQ11T,127 Product Details

PHX18NQ11T,127 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 56 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 635pF @ 25V.12.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 50.2A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 110V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 110V.Using drive voltage (10V) reduces this device's overall power consumption.

PHX18NQ11T,127 Features


the avalanche energy rating (Eas) is 56 mJ
based on its rated peak drain current 50.2A.
a 110V drain to source voltage (Vdss)


PHX18NQ11T,127 Applications


There are a lot of NXP USA Inc.
PHX18NQ11T,127 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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