2SD2661T100 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 200mA 2V.With a collector emitter saturation voltage of 90mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages should be kept at 2A to achieve high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.There is a transition frequency of 360MHz in the part.The maximum collector current is 2A volts.
2SD2661T100 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
2SD2661T100 Applications
There are a lot of ROHM Semiconductor 2SD2661T100 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
