2SB1302S-TD-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 60mA, 3A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.320MHz is present in the transition frequency.A maximum collector current of 5A volts is possible.
2SB1302S-TD-E Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 320MHz
2SB1302S-TD-E Applications
There are a lot of ON Semiconductor 2SB1302S-TD-E applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
