2N4123RLRM Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 2mA 1V.A collector emitter saturation voltage of 300mV allows maximum design flexibility.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 200mA.250MHz is present in the transition frequency.A maximum collector current of 200mA volts can be achieved.
2N4123RLRM Features
the DC current gain for this device is 50 @ 2mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 250MHz
2N4123RLRM Applications
There are a lot of ON Semiconductor 2N4123RLRM applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
