MJD32T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJD32T4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
15W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
3A
Transition Frequency
3MHz
Frequency - Transition
3MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.20000
$0.2
500
$0.198
$99
1000
$0.196
$196
1500
$0.194
$291
2000
$0.192
$384
2500
$0.19
$475
MJD32T4 Product Details
MJD32T4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).In this part, there is a transition frequency of 3MHz.This device displays a 40V maximum voltage - Collector Emitter Breakdown.
MJD32T4 Features
the DC current gain for this device is 10 @ 3A 4V the vce saturation(Max) is 1.2V @ 375mA, 3A a transition frequency of 3MHz
MJD32T4 Applications
There are a lot of Rochester Electronics, LLC MJD32T4 applications of single BJT transistors.